New Gallium Nitride Devices Reduce Data Center Power Loss
The new hardware from Renesas enables higher efficiency and smaller footprints in server power delivery systems.
Updated on Oct. 21, 2026 in Semiconductors
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Renesas has released two new families of gallium nitride (GaN) power devices targeting data centers and industrial systems. The 650 V FET is currently sampling, while the 100 V E-mode transistor series is available with evaluation boards.
Why it matters
These components aim to increase power density in high-performance computing environments by reducing energy waste during rapid switching. Their adoption could improve thermal management and overall efficiency in data center power delivery architectures.
The 650 V TP65H020G4PLSGBD features 20 mΩ resistance and uses dual-side cooling in an 8x8 mm package, achieving a 57% footprint reduction versus traditional TOLT packaging. The 100 V E-mode series includes four transistors with resistance ratings ranging from 5 mΩ to 1.2 mΩ.
The players
Renesas
A global semiconductor manufacturer specializing in power management, microcontrollers, and system-on-chip solutions for industrial and data center infrastructure.
The details
The 650 V device utilizes a cascode architecture, which pairs a depletion-mode GaN HEMT (High Electron Mobility Transistor) with a low-voltage silicon MOSFET to achieve normally-off operation. The 100 V E-mode (enhancement-mode) transistors utilize a gate structure designed to match existing silicon footprints, simplifying integration for power engineers. These devices reduce power consumption through lower gate and output charges, which minimize energy loss during high-frequency switching cycles.
Timeline
Renesas announced the new GaN devices on October 21, 2026.
Mass production of the 650 V device is scheduled for mid-2027.
The Tech Race
Renesas is expanding its GaN portfolio to compete with established silicon-based power solutions by emphasizing superior switching efficiency. This product launch directly challenges current power density benchmarks in data centers, where space-constrained cooling is a critical design bottleneck.
Engineers and hardware designers working on server power supply units can currently access 100 V evaluation boards to begin integration testing. The 650 V devices are limited to sampling units, with full-scale availability for production-grade systems anticipated for mid-2027.
The takeaway
The move toward gallium nitride is accelerating as power density requirements in data centers exceed the physical limits of traditional silicon. Watch for the mid-2027 production milestone, which will signal the transition of these devices from evaluation prototypes to full-scale infrastructure deployments.
What happens next
Mass production for the TP65H020G4PLSGBD device is scheduled to commence in mid-2027.
Further reading
For broader trends in power management architecture, visit the Semiconductors section.
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