Atomera and IQE Partner on New RF Chip Substrates
The companies aim to leverage atomic-level materials to drive down the manufacturing costs of RF components.
Updated on Oct. 23, 2026 in Semiconductors
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Atomera and IQE have entered a joint development agreement to combine Mears Silicon Technology with Gallium Nitride (GaN) epitaxy on silicon wafers. This research-stage project aims to develop more cost-effective semiconductor substrates for radio frequency (RF) applications.
Why it matters
By integrating proprietary silicon-based materials into GaN production, this partnership seeks to lower the manufacturing costs of RF semiconductors. Success could enable higher-performance components for mainstream communication markets that currently rely on more expensive substrates.
The partnership focuses on optimizing a multi-layer structure using Mears Silicon Technology (MST) to improve GaN epitaxy—the growth of a crystalline layer on a substrate. The project aims to produce MST-enabled GaN-on-silicon wafers for performance testing against industry standards.
The players
Atomera
A materials science company that develops Mears Silicon Technology to improve semiconductor performance and power efficiency.
IQE
A manufacturer of compound semiconductor wafer products used in global wireless, photonics, and power electronics markets.
The details
The collaboration leverages MST, a thin-film material science approach that manipulates silicon at the atomic level to improve device performance. Engineers will integrate this layer into the wafer substrate to support high-quality GaN deposition, a process where a gallium and nitrogen crystal is grown atop the silicon. By refining the interface between these layers, the teams aim to address efficiency challenges inherent in RF semiconductor manufacturing.
Timeline
October 23, 2026: Atomera and IQE announced the partnership agreement.
The Tech Race
This partnership targets the ongoing industry shift toward more affordable GaN-based RF components for mainstream telecommunications. It follows a trajectory of research aimed at overcoming the traditional performance limitations of silicon-based semiconductors.
The partnership is currently in the research and development phase, meaning no consumer-facing products are available yet. Future developments may impact the cost and capability of RF chips in wireless communications equipment.
The takeaway
This agreement initiates a multi-cycle development process aimed at integrating atomic-level material refinements into mass-market wafer production. Industry observers should watch for future technical benchmarks regarding the performance of these MST-enabled wafers versus standard silicon alternatives.
Further reading
For broader trends in materials science, visit the Semiconductors section.
Source note: This article includes information reported by Everythingrf.
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