New 2200V PowiGaN Tech Targets AI Data Center Power

The high-voltage semiconductor technology supports the industry's shift toward 1500V power distribution architectures.

Updated on Oct. 16, 2026 in Data Centers

Isometric editorial illustration of a faceted geometric solid representing a gallium nitride semiconductor crystal, rendered in flat teal and mustard.
Power Integrations' 2200V PowiGaN semiconductor technology has been nominated for the Electronics Excellence Awards for its role in data center power scaling. AI Illustration. Upload story photo >

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Power Integrations' 2200V PowiGaN technology has been nominated for the Electronics Excellence Awards. The gallium nitride (GaN) semiconductor technology is designed to exceed the voltage limits of current commercially available alternatives for high-voltage power systems.

Why it matters

As AI data centers shift toward higher-voltage distribution architectures, such as the 1500V systems currently projected, there is a mounting need for components that can handle increased power density. This nomination marks the recognition of a technology intended to address these scaling challenges.

The PowiGaN technology reaches a 2200V rating, surpassing existing GaN offerings. Existing 1700V and 1250V variants are already being utilized in single-stage auxiliary power applications and as alternatives to stacked solutions for 800VDC data center bus architectures.

The players

Power Integrations

A semiconductor company specializing in high-voltage integrated circuits for energy-efficient power conversion.

The details

The technology leverages gallium nitride (GaN) — a wide-bandgap semiconductor material that allows for smaller, more efficient power devices — to provide voltage margin for high-voltage power systems. By enabling high switching frequencies, the ICs support architectures that require higher voltage distribution and greater power density without requiring the multi-stage setups traditional solutions often demand.

Timeline

  1. November 10, 2026, 12:30pm: Electronics Excellence Awards ceremony at electronica.

The Tech Race

The drive toward 1500V distribution architectures is shifting the semiconductor requirement for AI data center power delivery. This development places the technology in a direct push against traditional, lower-voltage silicon and GaN components that struggle to maintain performance at these elevated bus levels.

Data center operators and power system designers can currently leverage the 1250V and 1700V versions of this technology for existing 800VDC architectures. These components are designed to simplify power stages by reducing the reliance on stacked solutions.

The takeaway

The nomination highlights a critical move toward higher voltage overhead in power systems. Designers should watch for the official award announcement on November 10, 2026, which may provide further validation of these components in commercial data center deployments.

Further reading

For more on the infrastructure shifts within the industry, see our coverage of Data Centers.

More information

View the official PowiGaN technology innovation details provided by Power Integrations.

Source note: This article includes information reported by Electronic Specifier.

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Do you believe advancements in power technology are essential for improving our nation's energy infrastructure?