Microchip Launches New GaN Converter for Space Systems
The 20 A power module delivers radiation-hardened performance for satellite power architectures.
Updated on Oct. 21, 2026 in Semiconductors
Microchip has launched the POL-05-20S-T, a Gallium Nitride (GaN) point-of-load converter designed for space electronics. The component is now available in production quantities.
Why it matters
The release provides space-grade power conversion hardware for satellite and orbital systems, utilizing GaN technology to manage power delivery in harsh radiation environments.
The POL-05-20S-T delivers a continuous current of 20 A within a 1.51 by 1.51 by 0.45-inch package. It operates between 4.75 V and 13.2 V input, regulating outputs from 0.7 V to 5 V across a temperature range of -55°C to +100°C.
The players
Microchip
A semiconductor manufacturer specializing in microcontrollers, mixed-signal, and aerospace-grade power management hardware.
The details
The converter utilizes GaN power HEMTs (High Electron Mobility Transistors), which are semiconductor devices that use a heterojunction between two different materials to enable high-speed electron movement for efficient power switching. A synchronous buck topology—a circuit that reduces voltage while increasing current—manages the power conversion. The system incorporates current-mode control to regulate the output voltage, ensuring stability during the high-stress conditions found in orbit.
Timeline
October 21, 2026: The device became available in production quantities.
The Tech Race
The shift toward GaN technology represents an industry-wide transition away from traditional silicon-based power components in satellite power management. This device competes in the space-grade sector where high power density and radiation tolerance are the primary benchmarks for mission success.
This component is intended for use by aerospace systems engineers building power delivery networks for orbital hardware. It is currently available for integration into new satellite designs that require high-current capacity in a compact, radiation-hardened form factor.
The takeaway
The move to GaN technology in space-grade power supplies highlights the ongoing quest to increase power density for modern orbital payloads. Engineers should monitor integration results for the POL-05-20S-T to determine how it performs in actual radiation-hardened system architectures.
Further reading
For broader trends in radiation-tolerant hardware, visit our Semiconductors section.
Source note: This article includes information reported by EDN.
