Star Power Releases New Silicon Carbide Power Module
The 1,200 V device enables easier integration of silicon carbide components into existing PCB-based power designs.
Updated on Oct. 29, 2026 in Semiconductors
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Star Power Semiconductor has announced the MD53HFL120L2S_B20, a new silicon carbide (SiC) half-bridge power module designed for direct PCB integration. The device is now available for specialized power electronic applications.
Why it matters
The release of this SiC module provides engineers with a component designed to fit into existing silicon IGBT-based designs, potentially accelerating the transition to more efficient wide-bandgap materials without requiring a total system redesign.
The MD53HFL120L2S_B20 module features a 1,200 V rating and a 120 A current class. It utilizes an aluminium nitride active metal brazed substrate for thermal management.
The players
Star Power Semiconductor
A developer of power modules and discrete semiconductor devices focused on high-efficiency power electronics for industrial and energy applications.
The details
The MD53HFL120L2S_B20 integrates two SiC MOSFETs—semiconductor switches made of silicon and carbon that handle high voltages with less heat loss—in a half-bridge configuration. By using an aluminium nitride active metal brazed substrate—a ceramic layer bonded to metal that provides high thermal conductivity—the module enables efficient heat dissipation. The architecture is specifically optimized for seamless integration onto printed circuit boards.
Timeline
2026: Star Power Semiconductor will present the module at the electronica 2026 trade show in Munich.
The Tech Race
This module represents the ongoing industry effort to replace silicon IGBTs with more thermally efficient wide-bandgap materials. The competitive focus remains on lowering the barrier to entry for engineers transitioning existing architectures to silicon carbide.
Engineers working on power systems can integrate this module directly onto PCBs to potentially improve thermal performance and efficiency over legacy designs. Further details and demonstrations will be available at the upcoming electronica 2026 exhibition in Munich.
The takeaway
The MD53HFL120L2S_B20 simplifies the migration to silicon carbide for engineers managing high-voltage power conversion. Keep an eye on the Star Power exhibition booth 500 in Hall B4 at electronica 2026 for performance benchmarks and further technical documentation.
Further reading
For broader trends in component performance, visit the Semiconductors section.
Source note: This article includes information reported by Elektronikpraxis.
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