New MOSFETs Cut AI Server Power Losses Up to 33%
Infineon's OptiMOS 7 40 V devices target lower conduction and switching losses in high-frequency converters, based on manufacturer-stated figures.
Updated on Nov. 4, 2026 in Semiconductors
Infineon Technologies has launched its OptiMOS 7 40 V power MOSFET portfolio, a set of switching-optimized transistors for high-frequency DC-DC power conversion. The devices are announced product launches described in the company's release, and the stub does not state their availability or pricing.
Why it matters
Power MOSFETs that cut both conduction and switching losses matter as AI servers and data centers draw more power through their voltage converters. Efficiency gains at this layer compound across the rack, which is why the trade-off between on-state resistance and switching charge is central to the design race.
The IQE010N04LM7CG variants reach a maximum RDS(on) of 1.0 mΩ at 10 V gate-source voltage, and the 5 mm × 6 mm drain-down packages list values of 0.65 mΩ, 0.69 mΩ and 1.1 mΩ. These are manufacturer-specified maxima, and the stub includes no measured losses or thermal results to verify them.
The players
Infineon Technologies
A German semiconductor maker whose power-device portfolio, including the OptiMOS line of MOSFETs, is widely used in server and telecom power supplies.
The details
A MOSFET (metal-oxide-semiconductor field-effect transistor) is a switch that turns current on and off under control of a gate voltage. RDS(on), the on-state resistance, determines how much power is lost while the switch conducts, while gate charge and output charge determine how much energy is lost each time it switches. The portfolio is tuned to balance these three quantities, and the devices are optimized for a 5 V gate drive, which suits gate-drive ecosystems already used with GaN (gallium nitride) transistors. The devices support switching frequencies up to 1 MHz in suitable topologies and are rated for junction temperatures up to 175 °C.
Timeline
The launch is dated November 4, 2026.
The Tech Race
The OptiMOS 7 40 V devices are positioned as a generational step past the OptiMOS 6 predecessor IQE013N04LM6CGSC, with the stated gains concentrated in on-state resistance and switching charge. The stub does not name competing power-MOSFET roadmaps from other vendors, so no direct race comparison is drawn.
The devices target AI servers, data centers and telecom infrastructure, so the efficiency gains reach end users indirectly through lower power losses in those systems. The stub does not give availability, pricing, or a timeline for designs to reach production hardware.
The takeaway
The reported gains come from balancing on-state resistance against switching charge, a trade-off that will matter more as converter switching frequencies rise. Watch for independent measurements of efficiency in server power supplies to confirm the datasheet figures.
Further reading
For more on the chip layer behind these gains, see Semiconductors.
