SemiQ Previews 1700V SiC Module to Upgrade Power Systems

The Gen4 module targets EV, motor-drive and grid designs, though availability has not yet been announced.

Updated on Nov. 3, 2026 in Semiconductors

Isometric editorial illustration of a single matte rectangular power module with metal terminal pins and a heat-sink fin on a cream surface, evoking high-voltage silicon carbide power electronics.
SemiQ, a Lake Forest, California silicon carbide chipmaker, previewed a 1700V Gen4 power module for EV, motor-drive, and grid equipment at electronica 2026 in Munich. AI Illustration. Upload story photo >

SemiQ, a Lake Forest, California maker of silicon carbide (SiC) power semiconductors, will preview its Gen4 1700V SiC half-bridge MOSFET module at electronica 2026 in Munich, Germany, from November 10 to 13, 2026. The module is announced and previewed; it is not yet a shipping product in this extraction.

Why it matters

Higher-voltage, lower-loss SiC switches address the rising power and thermal demands of electric vehicles, motor drives, smart-grid equipment and uninterruptible power supplies. The company is positioning a standard-footprint upgrade path so existing systems can adopt the new parts without costly redesigns.

The Gen4 1700V module is rated at 830A with an RDSon of 1.7mΩ in a standard 62mm x 152mm S4 package. Figures are manufacturer specifications presented ahead of the show, and no independent benchmark or comparison with prior SemiQ parts is included in the source.

The players

SemiQ

A Lake Forest, California company that designs, develops and manufactures custom silicon carbide power semiconductors and 150mm SiC epitaxial wafers.

The details

SiC MOSFETs are power switches built from silicon carbide, a wide-bandgap semiconductor that tolerates higher voltages and temperatures than conventional silicon. RDSon is the on-state resistance of a switch, and lower values mean less energy lost as heat when current flows. SemiQ says the Gen4 1700V module uses its fourth-generation SiC technology to reach 830A, and the module sits in a standard 62mm x 152mm S4 package so existing designs can be upgraded with minimal mechanical change.

Timeline

  1. November 10 to 13, 2026: electronica 2026 exhibition in Munich, Germany, where SemiQ will preview the Gen4 module.

  2. November 10, 2026: start of the show, with SemiQ also exhibiting its QSiC Gen3 SiC modules.

The Tech Race

SemiQ's 1700V Gen4 module extends its own 1200V QSiC Dual3 half-bridge family into a higher voltage class. The source does not place the module against named competitor parts, so its standing in the wider SiC power-module race cannot be assessed from this extraction.

Engineers designing EV drivetrains, motor drives and grid or UPS equipment may evaluate the Gen4 module once it is available, since the S4 footprint is meant to allow upgrades without a redesign. Availability, pricing and volume timing have not been announced.

The takeaway

Watch whether SemiQ follows the electronica preview with a datasheet or sampling announcement for the GCMS1P7C170S4B1-N module. Any independent measurements of its 1.7mΩ RDSon under load would show how the spec holds up in practice.

What happens next

SemiQ is scheduled to show the Gen4 1700V module and its QSiC Gen3 modules at electronica 2026 in Munich, November 10 to 13, 2026.

Further reading

For background on the chip technology behind this preview, see the Semiconductors section.